Nonvolatile semiconductor memory device

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United States of America Patent

PATENT NO 9230975
APP PUB NO 20150255479A1
SERIAL NO

14489700

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor substrate, a first stacked layer structure including first to nth semiconductor layers (n is a natural number greater than or equal to 2) stacked in a first direction, and extending in a second direction, and first to nth memory cells provided on surfaces of the first to nth semiconductor layers facing a third direction. The ith memory cell (1≦i≦n) comprises a second stacked layer structure in which a first insulating layer, a charge storage layer, a second insulating layer, and a control gate electrode are stacked. The second insulating layer has an equivalent oxide thickness smaller than that of the first insulating layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Shosuke Kuwana, JP 67 926
Kiyotoshi, Masahiro Yokkaichi, JP 99 3643
Sakuma, Kiwamu Yokkaichi, JP 64 1728

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