SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Jun 20, 2014
filing date -
Mar 6, 2014
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Abstract
A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than 5×1021 atoms/cm3 and consisting mainly of aluminum.
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