Nonvolatile memory device and method of manufacturing the same
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United States of America Patent
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Jul 18, 2017
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N/A
app pub date -
Aug 8, 2014
filing date -
Mar 7, 2014
priority date (Note) -
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Abstract
According to one embodiment, a plurality of first wirings are disposed in a first direction and a second direction which intersect with each other, and extended in a third direction. A second wiring stack is configured to include second wirings and interlayer insulating films which are extended and alternately stacked in the second direction. A memory cell includes, in the first direction, a first variable resistive layer which is disposed on a side near the first wiring and a second variable resistive layer which is disposed on a side near the second wiring. The second variable resistive layer is disposed between the interlayer insulating films in the third direction, and made of a material which is obtained by oxidizing the second wiring.
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