Importance

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Abstract

According to one embodiment, a semiconductor device includes an optional first electrode, a second electrode, a first and a third semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third electrode, and a second insulating film. The first semiconductor region extends between the first electrode and the second electrode. The second semiconductor region extends between the first semiconductor region and the second electrode. The third semiconductor region extends between the second semiconductor region and the second electrode. The third semiconductor region has a dopant concentration higher than a dopant concentration of the first semiconductor region. The third electrode is in contact, via a first insulating film, with the first semiconductor region, the second semiconductor region, and the third semiconductor region. The third semiconductor region is disposed between the second insulating film and the third electrode.

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First Claim