Importance

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Abstract

A semiconductor device includes: a first semiconductor layer of a first conductive type having a first side and an opposed second side; a second semiconductor layer of a second conductive type formed on the first side; a third semiconductor layer of a second conductive type partially formed in the second semiconductor layer; a fourth semiconductor layer of a first conductive type formed between the first semiconductor layer and the second semiconductor layer, the fourth semiconductor layer facing the third semiconductor layer, the fourth semiconductor layer including a first region which has a first dopant concentration and a second region which has a second dopant concentration higher than the first dopant concentration; a fifth semiconductor layer of a first conductive type formed on the second side; and a conductor contacting the first semiconductor layer, the second semiconductor layer and the third semiconductor layer via an insulation film.

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First Claim