METHOD FOR FORMING A VIA STRUCTURE USING A DOUBLE-SIDE LASER PROCESS

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United States of America Patent

APP PUB NO 20150257281A1
SERIAL NO

14642098

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Abstract

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Embodiments include a multi-layer apparatus comprising a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer, wherein one or more of the dielectric layers include metal layers. The multi-layer apparatus further comprises a first via coupling a first metal layer and a second metal layer, a second via coupling the second metal layer and a fourth metal layer, a third via coupling the first metal layer and the second metal layer, and a fourth via coupling the third metal layer and the fourth metal layer. The first via is contiguous with the second via and the third via is contiguous with the fourth via. At least some of the vias have different depths relative to one another.

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MARVELL INTERNATIONAL LTDCANON'S COURT 22 VICTORIA STREET HAMILTON HM12

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kao, Huahung San Jose, US 30 141
Liou, Shiann-Ming Campbell, US 76 438

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