COMPOSITIONS AND METHODS FOR CMP OF TUNGSTEN MATERIALS
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United States of America Patent
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Sep 17, 2015
app pub date -
Mar 5, 2015
filing date -
Mar 12, 2014
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Abstract
The present invention provides chemical-mechanical polishing (CMP) methods for polishing a tungsten containing substrate. The polishing compositions used with the methods of the invention comprise an aqueous carrier, an abrasive, a polyamino compound, a metal ion, a chelating agent, an oxidizing agent, and optionally, an amino acid. The methods of the invention effectively remove tungsten while reducing surface defects such as recesses typically associated with tungsten CMP.
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