Importance

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Abstract

Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber; a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top surface and a side surface; a plurality of wafer fixing elements disposed on the top surface, and each of the wafer fixing elements has a boundary; a plurality of first heating elements directly under the susceptor arranged in parallel to the top surface; and a second heating element disposed directly under the outermost first heating element; wherein no other heating elements are disposed directly under the first heating elements other than the outermost first heating element; and wherein the first and the second heating elements are independently controllable.

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First Claim