Semiconductor memory device and method of controlling the same

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United States of America Patent

PATENT NO 9190142
APP PUB NO 20150262656A1
SERIAL NO

14294324

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Abstract

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A semiconductor memory device according to an embodiment comprises: a nonvolatile memory cell capable of multi-level storage; and a control circuit that performs write control on the memory cell. The control circuit executes: a first write operation to obtain a certain intermediate voltage distribution; a second write operation to obtain a final voltage distribution; and a change operation that changes a value of the first verify voltage according to the number of times of writes and the number of times of erases on the memory cell.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shimura, Yasuhiro Yokkaichi, JP 122 1156

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