Two-part programming methods

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United States of America Patent

PATENT NO 9502101
SERIAL NO

14725749

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Abstract

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A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programming the first memory cell to the first level. After programming the first memory cell to the first level, the second memory cell is programmed to the second level using a second set of program pulses within a second programming voltage range, where the first programming voltage range overlaps the second programming voltage range. The first memory cell that is programmed to the first level is inhibited while programming the second memory cell to the second level.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sarin, Vishal Cupertino, US 182 2194
Vahidimowlavi, Allahyar San Jose, US 22 71

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