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Abstract

A nonvolatile semiconductor memory device includes a plurality of memory cells electrically connected in series between first and second select transistors and stacked above a semiconductor substrate, a voltage generation circuit, and a controller that controls the voltage generation circuit to apply a write voltage to at least one of the memory cells before a write operation is performed on the first select transistor and, during the write operation on the first select transistor, apply a first voltage to gates of the memory cells, a second voltage that is higher than the first voltage to a gate of the second select transistor, and a third voltage that is higher than the second voltage to a gate of the first select transistor.

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First Claim