NON-VOLATILE MEMORY DEVICE
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Aug 28, 2014
filing date -
Mar 13, 2014
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Abstract
A nonvolatile memory device according to an embodiment includes: a semiconductor substrate; a memory cell array unit provided on an upper side of the semiconductor substrate; an integrated circuit unit provided between the memory cell array unit and the semiconductor substrate; and a peripheral circuit unit provided on the semiconductor substrate. The integrated circuit unit includes: a first contact electrode electrically connected to one of plurality of first interconnection layers; a second contact electrode connected to the peripheral circuit unit; and a first switching element connected between the first contact electrode and the second contact electrode, and conduction between the first contact electrode and the second contact electrode being controlled by a control circuit unit provided in the peripheral circuit unit.
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