Nonvolatile memory

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United States of America Patent

PATENT NO 9324457
APP PUB NO 20150262701A1
SERIAL NO

14458872

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Abstract

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According to one embodiment, a nonvolatile memory includes a memory area including a first magnetoresistive element, and a fuse circuit including a second magnetoresistive element serving as an anti-fuse element and configured to store correction information of the memory area when a defect exists in the memory area. The first magnetoresistive element includes a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer. The second magnetoresistive element includes a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takizawa, Ryousuke Naka Kanagawa, JP 31 211

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