SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Sep 3, 2014
filing date -
Mar 14, 2014
priority date (Note) -
Abandoned
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Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer, a first electrode provided on the first semiconductor layer, and a second electrode provided on the first semiconductor layer. The second electrode is apart from the first electrode in a second direction crossing a first direction from the first semiconductor layer toward the first electrode. The first electrode includes a first electrode layer and a second electrode layer. The first electrode layer includes a first metal. The second electrode layer is provided between the first electrode layer and the first semiconductor layer, and includes a second metal. The second metal has a melting point lower than a melting point of the first metal. A distance along the second direction between the first electrode layer and the second electrode is shorter than a distance along the second direction between the second electrode layer and the second electrode.
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