PLASMA DICING METHOD AND PLASMA DICING APPARATUS
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Sep 9, 2014
filing date -
Mar 17, 2014
priority date (Note) -
Abandoned
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Abstract
According to one embodiment, the plasma dicing method includes a deposition process depositing a film on the dicing region and on the metal electrodes exposed to the pad opening in an atmosphere containing a plasma of a first gas. The plasma dicing method includes an etching process etching the film by applying a first bias power to a lower electrode supporting the wafer in an atmosphere containing a plasma of a second gas. The substrate is etched by reducing the first bias power to a second bias power when light emission due to etching of the substrate at the dicing region is detected during the etching process.
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