SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20150263001A1
SERIAL NO

14474011

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Abstract

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A semiconductor device includes a first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer. A first control electrode is on the first semiconductor layer with a first insulating layer between the first control electrode and the first semiconductor layer. A second control electrode is on the first semiconductor layer with a second insulating layer between the second control electrode and the first semiconductor layer, a distance between the first control electrode and the first semiconductor layer is less than a distance between the second control electrode. A wiring electrically connects the first control electrode and the second control electrode.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FUJIMOTO, Hidetoshi Kawasaki Kanagawa, JP 101 2172
NAKA, Toshiyuki Nonoichi Ishikawa, JP 42 234
ONO, Tasuku Nonoichi Ishikawa, JP 18 47
SAITO, Yasunobu Nomi Ishikawa, JP 52 382
UCHIHARA, Takeshi Kawaguchi Saitama, JP 22 89
YOSHIOKA, Akira Nomi Ishikawa, JP 102 551

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