Importance

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Abstract

A nonvolatile semiconductor storage device is provided with bit-line contacts extending through an interlayer insulating film disposed between two select gate transistors disposed so as to face one another in a portion where memory-cell units reside adjacent to one another in a first direction and electrically connecting a semiconductor substrate with bit lines in upper layers, wherein three or more of the bit-line contacts adjacent in a second direction and displaced from one another in the first direction are grouped as a layout pattern, and wherein among the bit-line contacts of the layout pattern, bit-line contacts located at two end portions in the first direction are provided so as to overlap with gate electrodes of the select gate transistors via an insulating film.

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First Claim