Importance

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Abstract

A semiconductor memory device according to one embodiment includes a substrate, a first stacked body provided on the substrate, a second stacked body provided on the first stacked body, a first semiconductor pillar extending in the first stacked body and the second stacked body, a first memory film provided between the first semiconductor pillar and the first electrode films, a first interconnect, a second interconnect, a first plug and a second plug. The first stacked body includes a plurality of first electrode films and a plurality of first insulating films. The second stacked body includes a plurality of second electrode films and a plurality of second insulating films. The first plug electrically connects the plurality of second electrode films to each other. The second plug electrically connects the plurality of second electrode films to each other.

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First Claim