Importance

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Abstract

A semiconductor device includes a semiconductor substrate having a memory cell region and a peripheral circuit region, a plurality of adjacent memory gates formed on the semiconductor substrate via a tunnel insulating film in the memory cell region, a first insulating film covering the memory gates and having air gaps formed therein between the memory gates, a first barrier film on the first insulating film, a second insulating film above the semiconductor substrate in the peripheral circuit region, a second barrier film on the first barrier film and the second insulating film, and a third insulating film on the second barrier film and having first and second grooves, in which first and second wirings are respectively formed. A lower surface of the second wiring is closer to the upper surface of the semiconductor substrate in the peripheral circuit region than an upper surface of the second barrier film.

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First Claim