Nonvolatile semiconductor memory device
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United States of America Patent
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Jun 28, 2016
Grant Date -
Sep 17, 2015
app pub date -
Mar 4, 2015
filing date -
Mar 13, 2014
priority date (Note) -
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Abstract
According to one embodiment, a memory device, includes: a stacked body including first electrode layers stacked alternately with first insulating layers; a selection gate stacked body including selection gate electrode layers stacked alternately with second insulating layers in a stacking direction of the stacked body; a semiconductor member provided inside the stacked body and the selection gate stacked body, the semiconductor member extending in the stacking direction; a memory film provided between the semiconductor member and each of the f first electrode layers; and a gate insulator film provided between the semiconductor member and each of the selection gate electrode layers. Selection transistors are provided on the stacked body, the plurality of selection transistors included the selection gate electrode layers, the gate insulator film, and the semiconductor member, at least two of the selection transistors have mutually different threshold potentials.
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