Semiconductor Device and Manufacturing Method Thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 17, 2015
app pub date -
Sep 10, 2014
filing date -
Mar 12, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
In a manufacturing method of a semiconductor device according to an embodiment, a stacked structure constituted by an electrode, an insulation film, and an amorphous thin film is formed. A microwave of a first frequency is irradiated to the stacked structure so as to selectively heat the electrode. Thereby a seed crystal is formed in a part of the amorphous thin film adjacent to the electrode. A microwave of a second frequency that is different from the first frequency is irradiated to the stacked structure so as to grow the seed crystal. Thereby a polycrystalline thin film is formed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully