STRUCTURES AND METHODS OF FORMING PHOTODIODE ARRAYS HAVING THROUGH-SEMICONDUCTOR VIAS
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United States of America Patent
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Sep 17, 2015
app pub date -
Mar 12, 2014
filing date -
Mar 12, 2014
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Abstract
A semiconductor structure includes a through-semiconductor via having an insulating lining isolating a conductive center region of the through-semiconductor via from the surrounding semiconductor, and wherein the cross-sectional profile of the through-semiconductor via has a varying taper angle such that the diameter of the through-semiconductor via is at its narrowest at a location between two essentially parallel surfaces of the semiconductor structure.
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