Dual channel vertical field effect transistor including an embedded electrode
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United States of America Patent
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May 17, 2016
Grant Date -
Sep 17, 2015
app pub date -
Mar 12, 2014
filing date -
Mar 12, 2014
priority date (Note) -
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Abstract
A device is disclosed including one or more field effect transistors, each field effect transistor including: an elongated drain contact line including an electrically conductive material extending along a first horizontal direction; a drain including a first conductivity type semiconductor region overlaying the drain contact line; a source including a the first conductivity type semiconductor region located above the drain; and a gate extending vertically between the drain and the source. Each field effect transistor may include a first channel and a second channel, each including a second conductivity type
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