Semiconductor device and method of manufacturing the same
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United States of America Patent
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May 10, 2016
Grant Date -
Sep 17, 2015
app pub date -
Mar 2, 2015
filing date -
Mar 14, 2014
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Abstract
A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type located between the first electrode and the second electrode and having a region in which a carbon vacancy density becomes lower in a first direction from the first electrode to the second electrode, a second semiconductor layer of the first conductivity type located between the first electrode and the first semiconductor layer and having an impurity element concentration higher than the impurity element concentration of the first semiconductor layer, and a plurality of third semiconductor layers of a second conductivity type located between the second electrode and the first semiconductor layer.
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