SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Sep 10, 2014
filing date -
Mar 13, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In accordance with an embodiment, a semiconductor device includes a GaN layer and a first AlxGa1-xN layer (0≦X<1). The first AlxGa1-xN layer (0≦X<1) is located on the GaN layer. The first AlxGa1-xN layer (O≦X<1) is located in contact with the GaN layer. The first AlxGa1-xN layer (0≦X<1) includes carbon (C).
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