SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

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United States of America Patent

APP PUB NO 20150263101A1
SERIAL NO

14482258

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Abstract

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In one embodiment, a semiconductor device includes a semiconductor chip including a nitride semiconductor layer, and including a control electrode, a first electrode and a second electrode provided on the nitride semiconductor layer. The device further includes a support including a substrate, and including a control terminal, a first terminal and a second terminal provided on the substrate. The semiconductor chip is provided on the support such that the control electrode, the first electrode and the second electrode face the support. The control electrode, the first electrode and the second electrode of the semiconductor chip are electrically connected to the control terminal, the first terminal and the second terminal of the support, respectively.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimoto, Hidetoshi Kawasaki Kanagawa, JP 101 2172
Masuko, Shingo Ishikawa Kanazawa, JP 24 107
Mimura, Masahito Togane Chiba, JP 1 0
Naka, Toshiyuki Nonoichi Ishikawa, JP 42 234
Ohno, Tetsuya Nomi Ishikawa, JP 65 516
Ono, Tasuku Nonoichi Ishikawa, JP 18 47
Saito, Yasunobu Nomi Ishikawa, JP 52 382
Uchihara, Takeshi Kawaguchi Saitama, JP 22 89
Yanase, Naoko Inagi Tokyo, JP 32 447
Yasumoto, Takaaki Kawasaki Kanagawa, JP 45 776
Yoshioka, Akira Nomi Ishikawa, JP 102 551
Yumoto, Miki Kawasaki Kanagawa, JP 17 47

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