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Abstract

A semiconductor device including semiconductor substrate having an active region and an element isolation region, the active region isolated by the element isolation region, the element isolation region provided with an element isolation trench; a memory-cell transistor formed above the semiconductor substrate and having a gate electrode formed above the active region via a first insulating film, the gate electrode formed of a stack including a floating gate electrode, a first interelectrode insulating film, and a control gate electrode; an element isolation insulating film filled in the element isolation trench; and a second interelectrode insulating film disposed above the element isolation insulating film so as to form a stack of the second interelectrode insulating film and the control electrode above the element isolation insulating and a dielectric constant of the second interelectrode insulating film being higher than a dielectric constant of the first interelectrode insulating film.

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First Claim