SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Mar 11, 2015
filing date -
Mar 17, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
According to one embodiment, a plurality of electrode films, a semiconductor pillar, a tunnel insulating film, a charge storage film, and a block insulating film. The plurality of electrode films are arranged to be separated each other along a first direction. The block insulating film includes a silicon oxide layer, and a high dielectric constant layer made of high dielectric constant material having a dielectric constant higher than a dielectric constant of silicon oxide. The high dielectric constant layer has a first portion and a second portion. The first portion is disposed between the semiconductor pillar and a space between the electrode films. The second portion is disposed between the semiconductor pillar and the electrode films. In a direction perpendicular to the first direction, a thickness of the first portion is thinner than a thickness of the second portion.
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