HETEROJUNCTION BIPOLAR TRANSISTORS WITH INTRINSIC INTERLAYERS
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
May 29, 2015
filing date -
May 24, 2012
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Abstract
Heterojunction bipolar transistors are provided that include at least one contact (e.g., collector, emitter, and/or base) formed by a heterojunction between a crystalline semiconductor material and a doped non-crystalline semiconductor material layer. An interfacial intrinsic non-crystalline semiconductor material layer is present at the heterojunction between the crystalline semiconductor material and the doped non-crystalline semiconductor material layer. The presence of the interfacial intrinsic non-crystalline semiconductor material layer improves the surface passivation of the crystalline semiconductor material by reducing the interface defect density at the heterojunction.
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