SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20150263149A1
SERIAL NO

14485028

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, an insulating region, and a third semiconductor region. The first semiconductor region is of a first conductivity type. The first semiconductor region is provided between the first electrode and the second electrode, and contacts the first electrode. The second semiconductor region is of a second conductivity type. The second conductor region is provided between the first semiconductor region and the second electrode. The insulating region extends from the second electrode to a side of the first semiconductor region. The third semiconductor region is of the first conductivity type. The third semiconductor region is provided in at least a portion of a region between the second semiconductor region and the insulating region, and contacts the first semiconductor region.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MIANTO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsudai, Tomoko Shibuya Tokyo, JP 146 1130
Misu, Shinichiro Machida Tokyo, JP 12 78
Ogura, Tsuneo Kamakura Kanagawa, JP 100 1434
Yasuhara, Norio Kanazawa Ishikawa, JP 76 1112

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