Semiconductor transistor device

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United States of America Patent

PATENT NO 9349853
APP PUB NO 20150263156A1
SERIAL NO

14458645

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Abstract

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According to one embodiment, a semiconductor device includes first electrode and second electrodes, first, second, third, fifth, and fourth semiconductor regions, a third electrode, and a second insulating film. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the first electrode. The third semiconductor region is provided between the first semiconductor region and the second electrode. The fifth semiconductor region is provided between the first semiconductor region and the second electrode. The fourth semiconductor region is provided between the third semiconductor region and the second electrode and between the fifth semiconductor region and the second electrode. The third electrode contacts the first, third, and fourth semiconductor regions via a first insulating film. The second insulating film contacts the first, fifth, and fourth semiconductor regions.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morizuka, Kohei Himeji Hyogo, JP 8 26

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