SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Sep 17, 2014
filing date -
Mar 14, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device of an embodiment includes: an n-type nitride semiconductor layer; an insulating layer selectively provided on the nitride semiconductor layer; an n-type first nitride semiconductor region provided on the nitride semiconductor layer and the insulating layer; an n-type second nitride semiconductor region provided on the insulating layer; a p-type third nitride semiconductor region provided between the first nitride semiconductor region and the second nitride semiconductor region; a gate insulating film provided on the third nitride semiconductor region; a gate electrode provided on the gate insulating film; a first electrode electrically connected to the second nitride semiconductor region; and a second electrode that is provided on the opposite side of the nitride semiconductor layer from the insulating layer, and is electrically connected to the nitride semiconductor layer.
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