Importance

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Abstract

A semiconductor device includes first and second semiconductor layers, first and second semiconductor regions, a source region, a drain region, and a gate electrode. The second semiconductor layer of a first conductive type is formed over the first semiconductor layer. The first semiconductor region of a second conductive type is formed on a surface of the second semiconductor layer. The source region of the first type is formed on a surface of the first semiconductor region. The drain region of the first type is formed on a surface of the first semiconductor layer having the first type, is separated from the source region. The second semiconductor region of the second type is provided between the drain region and the first semiconductor layer. The gate electrode is formed over the second semiconductor layer and is provided between the drain region and the source region.

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First Claim