SUBSTRATE FOR SEMICONDUCTOR DEVICES, METHOD OF MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR DEVICES, AND SOLID-STATE IMAGING DEVICE
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United States of America Patent
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Issued Date -
Sep 17, 2015
app pub date -
Mar 2, 2015
filing date -
Mar 13, 2014
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Abandoned
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Abstract
According to one embodiment, a substrate for semiconductor devices includes a P-type semiconductor substrate, a P-type or N-type semiconductor layer, and a P-type or N-type epitaxial layer. The P-type or N-type semiconductor layer is provided at a surface layer of the semiconductor substrate and has a resistance value lower than a resistance value of the semiconductor substrate. The P-type or N-type epitaxial layer is provided on a surface of the semiconductor layer and has a resistance value higher than the resistance value of the semiconductor layer.
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