CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Sep 24, 2015
app pub date -
Aug 8, 2014
filing date -
Mar 20, 2014
priority date (Note) -
Abandoned
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Abstract
A complementary metal-oxide-semiconductor (CMOS) image sensor includes a transfer gate formed on a substrate; a photo diode formed at or in a surface portion of the substrate on one side of the transfer gate, a floating diffusion region formed at or in a surface portion of the substrate on another side of the transfer gate, a first impurity region having a first conductive type formed at or in a surface portion of the substrate between the photo diode and the floating diffusion region, and a buried channel region having a second conductive type formed under the first impurity region.
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