CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20150270308A1
SERIAL NO

14453028

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Abstract

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A complementary metal-oxide-semiconductor (CMOS) image sensor includes a substrate including a photodiode, a transistor on the substrate; a first insulating layer on the substrate; a contact connected to the transistor and passing through the first insulating layer; an etch stop layer on the first insulating layer; a second insulating layer on the etch stop layer; and a signal line extending through the etch stop layer and the second insulating layer, on the first insulating layer and connected to the contact.

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Patent Owner(s)

Patent OwnerAddress
DONGBU HITEK CO LTDSEOUL CITY KOREA SEOUL

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Sun Icheon-si, KR 91 1396

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