Abrupt source/drain junction formation using a diffusion facilitation layer
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United States of America Patent
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Dec 13, 2016
Grant Date -
Sep 24, 2015
app pub date -
Apr 27, 2015
filing date -
Mar 21, 2014
priority date (Note) -
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Abstract
A method of forming a field effect transistor (FET) device includes forming a diffusion facilitation layer on top of a semiconductor substrate; forming a doped, raised source/drain (RSD) layer on the diffusion facilitation layer; removing a portion of the diffusion facilitation layer, corresponding to a region directly above a channel region of the FET device; and performing an anneal so as to define abrupt source and drain junctions in the semiconductor substrate, wherein dopant atoms from the doped RSD layer diffuse within the diffusion facilitation layer at a faster rate than with respect to the semiconductor substrate.
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