Dielectric liner for a self-aligned contact via structure
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United States of America Patent
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Jun 7, 2016
Grant Date -
Sep 24, 2015
app pub date -
Oct 9, 2014
filing date -
Mar 24, 2014
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Abstract
At least one dielectric material layer having a top surface above the topmost surface of the gate electrode of a field effect transistor is formed. Active region contact via structures are formed through the at least one dielectric material layer to the source region and the drain region. A self-aligned gate contact cavity is formed over the gate electrode such that at least one sidewall of the gate contact cavity is a sidewall of the active region contact via structures. A dielectric spacer is formed at the periphery of the gate contact cavity by deposition of a dielectric liner and an anisotropic etch. A conductive material is deposited in the gate contact cavity and planarized to form a self-aligned gate contact via structure that is electrically isolated from the active region contact via structures by the dielectric spacer.
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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TESSERA INC | 3025 ORCHARD PARKWAY SAN JOSE CA 95134 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Basker, Veeraraghavan S | Schenectady, US | 487 | 4282 |
Cheng, Kangguo | Schenectady, US | 3073 | 29791 |
Khakifirooz, Ali | Los Altos, US | 842 | 11906 |
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