HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY AND METHOD OF PREPARING THE SAME

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United States of America Patent

APP PUB NO 20150270381A1
SERIAL NO

14636714

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Abstract

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A high-efficiency heterojunction filed effect transistor in which a gate electrode area is formed to the direction of a drain electrode on nitride-based buffer layers with a low dislocation density to exhibit a high breakdown voltage, and its preparation method.

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Patent Owner(s)

Patent OwnerAddress
INDUSTRIAL COOPERATION FOUNDATION OF CHONBUK NATIONAL UNIVERSITYJEONJU-SI JEOLLABUK-DO 54896

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JEON, DaeWoo Jeollabuk-do, KR 1 1
LEE, InHwan Jeollabuk-do, KR 11 16

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