SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20150270399A1
SERIAL NO

14439165

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A method for manufacturing a semiconductor structure is disclosed. The method comprises: providing an SOI substrate, which comprises, from top to bottom, an SOI layer (100), a BOX layer (110) and a base layer (130); forming a dummy gate stack on the SOI substrate and an implantation barrier layer on both sides of the dummy gate stack; removing the dummy gate stack to form a gate recess (220); and performing, via the gate recess (220), implantation of stress inducing ions to the semiconductor structure and annealing to form, right below the gate recess (220), a stress inducing region (150) under the BOX layer (110) of the SOI substrate. Accordingly, the present invention further provides a semiconductor structure manufactured according to the above method.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liang, Qingqing Lagrangeville, US 158 1676
Luo, Zhijiong Poughkeepsie, US 249 2954
Yin, Haizhou Poughkeepsie, US 241 2072
Zhu, Huilong Poughkeepsie, US 589 8348

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