Contact for silicon heterojunction solar cells
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United States of America Patent
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Aug 22, 2017
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N/A
app pub date -
Jun 4, 2015
filing date -
Jun 17, 2011
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Abstract
A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.
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