Thermally assisted MRAM with increased breakdown voltage using a double tunnel barrier
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United States of America Patent
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Dec 15, 2015
Grant Date -
Sep 24, 2015
app pub date -
Mar 18, 2014
filing date -
Mar 18, 2014
priority date (Note) -
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Abstract
A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.
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