Semiconductor laser device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9431793
APP PUB NO 20150270684A1
SERIAL NO

14625103

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Abstract

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A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Suzuki, Nobuo Kamakura, JP 267 4180
Tohyama, Masaki Yokohama, JP 21 291

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