Configurable reference current generation for non volatile memory
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United States of America Patent
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Feb 23, 2016
Grant Date -
Oct 1, 2015
app pub date -
Jun 15, 2015
filing date -
Sep 30, 2013
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Abstract
This disclosure relates to generating a reference current for a memory device. In one aspect, a non-volatile memory device, such as a phase change memory device, can determine a value of a data digit, such as a bit, stored in a non-volatile memory cell based at least partly on the reference current. The reference current can be generated by mirroring a current at a node that is biased by a voltage bias. A configurable resistance circuit can have a resistance that is configurable. The resistance of the configurable resistance circuit can be in series between the node and a resistive non-volatile memory element. In some embodiments, a plurality of non-volatile memory elements can each be electrically connected in series between the resistance of the configurable resistance circuit and a corresponding selector.
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