Non-volatile memory based on retention modulation
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United States of America Patent
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Dec 8, 2015
Grant Date -
Oct 1, 2015
app pub date -
Mar 25, 2014
filing date -
Mar 25, 2014
priority date (Note) -
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Abstract
A mechanism that provides a source of reliability concern is leveraged to establish a non-volatile memory element. A memory cell may be programmed to have a longer retention time or a shorter retention time. Such mechanisms include, but are not limited to, threshold voltage modulation by charge trapping in the gate dielectric of an access transistor of a dynamic random access memory (DRAM) cell. A memory cell is programmed with a voltage pulse into a long retention time mode or into a short retention time mode. The programmed mode of each memory cell may be read by storing electrical charges in the DRAM cells, and by measuring whether the electrical charges remain after a threshold retention time. Further, a dual mode memory cell may be operated as a conventional DRAM cell, or as a non-volatile memory storing retention time as data.
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