Importance

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Abstract

According to one embodiment, a method for manufacturing semiconductor device includes: forming a mask layer on a layer to be used as an etching object, the mask layer having a first surface and a second surface, a first hole or trench being provided to pierce the mask layer; forming a second hole or trench in the layer by etching the layer exposed from the first hole or trench, and forming an eave portion on a side wall of the first hole or trench to make an opening of the first hole or trench narrow without plugging the first hole or trench; and supplying an etching gas including obliquely-incident ions into the second hole or trench under the cave portion, and etching a side wall of the second hole or trench with the etching gas.

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First Claim