Method of forming transistor contacts

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United States of America Patent

PATENT NO 9171758
APP PUB NO 20150279734A1
SERIAL NO

14230410

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Abstract

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Embodiments of the present invention provide an improved method for forming transistor contacts. A sacrificial layer is deposited in a first set of contact cavities, and a capping layer is formed on the sacrificial layer. This protects the first set of contact cavities during formation of a second set of contact cavities. The sacrificial layer is then removed, and the first and second sets of contact cavities are filled with a conductive material.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chowdhury, Murshed Mahmud Newburgh, US 1 12
Lee, Woo-Hyeong Poughquag, US 19 690
Xing, Aimin Fishkill, US 4 17

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