Semiconductor device including merged-unmerged work function metal and variable fin pitch
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United States of America Patent
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Nov 24, 2015
Grant Date -
Oct 1, 2015
app pub date -
Mar 26, 2014
filing date -
Mar 26, 2014
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Abstract
A semiconductor device includes a plurality of first semiconductor fins formed on a semiconductor substrate to define first fin trenches. At least one second semiconductor fin is formed on the semiconductor substrate to define second fin trenches. A first work function metal layer is formed in the first and second fin trenches. The first work function metal layer formed in the second trenches has a first cavity formed therein such that the at least one second semiconductor fin realizes a different concentration of the first work function metal layer with respect to the plurality of first semiconductor fins.
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