Signal-transmission-line structure and electronic device using the same

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United States of America Patent

PATENT NO 9184721
APP PUB NO 20150280684A1
SERIAL NO

14450703

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Abstract

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A signal-transmission-line structure includes a substrate, a through-silicon via (TSV) trench, a conductive substance, at least a conductor wire, and a dielectric layer. The substrate has a first surface and a second surface opposite to each other. The TSV trench is formed in the first surface of the substrate and extends along the first surface. The bottom surface of the TSV trench is located between the first surface and the second surface of the substrate. The TSV trench is filled with the conductive substance to form a transmission line. The conductor wire is located above the transmission line. The dielectric layer is located on the first surface of the substrate, and separates the conductor wire from the transmission line.

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Patent Owner(s)

  • REALTEK SEMICONDUCTOR CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jean, Yuh-Sheng Hsinchu, TW 60 310
Yeh, Ta-Hsun Hsinchu, TW 91 557
Yen, Hsiao-Tsung Hsinchu, TW 226 1324

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