SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20150287808A1
SERIAL NO

14435616

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Abstract

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A method for manufacturing a semiconductor structure is disclosed. The method comprises: providing an SOI substrate (200) comprising, from bottom to top, a base layer (201), a buried insulator layer (202), and a surface active layer (203); forming a gate stack on the substrate; removing the surface active layer (203) on both sides of the gate stack and removing a part of the buried insulator layer (202) to form an opening (240); filling the opening (240) with semiconductor materials so as to form source/drain regions (250). Correspondingly, a semiconductor structure is also disclosed. In the present disclosure, by extending the source/drain region to the buried insulator layer of the substrate, the source/drain series resistance is reduced while not increasing parasitic capacitance between the gate and the source/drain regions.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jiang, Wei Fujian, CN 202 1901
Yin, Haizhou Poughkeepsie, US 241 2072
Zhu, Huilong Poughkeepsie, US 589 8348

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